학술논문
Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate
Document Type
Conference
Author
Source
2007 IEEE International Conference on Microelectronic Test Structures Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on. :124-127 Mar, 2007
Subject
Language
ISSN
1071-9032
2158-1029
2158-1029
Abstract
Test structures for accurate UHF capacitance -voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.