학술논문

A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology
Document Type
Conference
Source
Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. Solid-State Circuits Conference Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European. :263-266 2005
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon germanium
Germanium silicon alloys
BiCMOS integrated circuits
Energy consumption
CMOS technology
Circuit testing
Circuit synthesis
Communications technology
Analog-digital conversion
Baseband
Language
ISSN
1930-8833
Abstract
This paper presents a low-power high-speed BiCMOS track-and-hold amplifier (THA). It combines the differential switched-emitter follower of (Vorenkamp and Verdaasdonk, 1992) with the low-droop output buffer presented in (Fiocchi et al., 2000). A test implementation consumes 70 mW of total power (30 mW THA). It works up to 15 GS/s, using minimum-size HBTs in a 0.25/spl mu/m 200 GHz SiGe BiCMOS technology. At 10 GS/s and an input signal of 1 GHz, the achieved THD corresponds to 6.8 bits accuracy. To our knowledge, the present circuit is by far the fastest THA with low power consumption and high accuracy.