학술논문

The First CMOS-Integrated Voltage-Controlled MRAM with 0.7ns Switching Time

Document Type

Conference

Author

Suhail, H.; He, H.; Yang, J.; Shu, Q.; Wang, C. -Y.; Yang, S. -Y.; Hsin, Y. -C.; Shih, C. -Y.; Lee, H. -H.; Wu, D.; Lee, A.; Wei, J. -H.; Gupta, P.; Wang, K. L.; Pamarti, S.

Source

2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Subject

Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Voltage measurement
Switches
CMOS technology
Magnetic fields
Thermal stability
Magnetic tunneling
Switching circuits

Language

ISSN

2156-017X

Abstract

Spin-Transfer-Torque (STT) Magnetic Random Access Memory (MRAM) has shown good density and compatibility with advanced nodes, but its write operation is slow and power-hungry. Voltage-Controlled (VC) Magnetic Tunneling Junction (MTJ) is a new magnetic storage device that shows significantly faster write speed and lower power, but no prior work has shown an embedded VC-MRAM array. In this paper, we present the first CMOS-integrated VC-MRAM. The VC-MRAM shows an ultra-fast 700ps switching time using 1.8V write voltage. The switching time has good uniformity, and 92% switching probability is achieved across the array. Reliability of >10 11 write cycles and read time of 8.5ns are demonstrated.

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