학술논문
A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts
Document Type
Conference
Author
Source
Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Power modulator symposium and high-voltage workshop Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International. :445-448 2002
Subject
Language
ISSN
1076-8467
Abstract
We propose a novel type of closing semiconductor switches based on a new physical mechanism-the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics.