학술논문
COMSOL Model of a Three-Gate Junctionless Transistor
Document Type
Conference
Author
Source
2021 IEEE 32nd International Conference on Microelectronics (MIEL) Microelectronics (MIEL), 2021 IEEE 32nd International Conference on. :93-96 Sep, 2021
Subject
Language
ISSN
2159-1679
Abstract
A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I- V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11 %. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.