학술논문
Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si
Document Type
Conference
Author
Source
1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) VLSI technology, systems, and applications VLSI Technology, Systems, and Applications, 1999. International Symposium on. :78-81 1999
Subject
Language
ISSN
1524-766X
Abstract
In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH/sub 3/ nitridation of Si followed by in-situ N/sub 2/O oxidation (NH/sub 3/+N/sub 2/O process). These films show excellent interface properties, significant lower leakage current (/spl sim/10/sup 2//spl times/), enhanced reliability, and superior boron diffusion barrier properties compared with SiO/sub 2/ of identical thickness.