학술논문
Noise Robust Reservoir Computing Based on Flexible Doped Hafnium Oxide Memcapacitors
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):2970-2975 May, 2024
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
In this work, we report a flexible doped hafnium oxide memcapacitor for building a noise-robust reservoir computing (RC) system. The nonlinearity and fading memory properties required for RC could be obtained from the capacitively coupled polarization switching and charge trapping in devices. The flexible oxide-based RC system shows a maximum accuracy of ~91.4% in the music genres (GTZAN Genre Collection dataset) classification task. The high noise robustness of the system has been verified by adding different signal-to-noise ratios (SNRs) of environment noise (NOISEX-92 dataset) to the raw music. The accuracy remains over 87% even with an SNR of 0 dB with respect to six types of noises. Our results are expected to open up opportunities for flexible electronics with high computing capability.