학술논문
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination
Document Type
Conference
Author
Source
2022 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2022 IEEE International. :1-4 May, 2022
Subject
Language
ISSN
2573-7503
Abstract
HfO 2 -based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging. Here, a fluorination treatment is presented that enables significant endurance and device stability improvement. Noise and charge pumping methods are applied to obtain deeper understanding of the underlying defect interaction in FeFETs.