학술논문
Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering
Document Type
Conference
Author
Source
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Juction technology Junction Technology, 2004. IWJT '04. The Fourth International Workshop on. :76-80 2004
Subject
Language
Abstract
Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (/spl Delta/E/E) of 4 x 10/sup -3/ has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 /spl times/ 10/sup 15/ ions/cm/sup 2/ before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.