학술논문

Ultra High Density SoIC with Sub-micron Bond Pitch
Document Type
Conference
Source
2020 IEEE 70th Electronic Components and Technology Conference (ECTC) Electronic Components and Technology Conference (ECTC), 2020 IEEE 70th. :576-581 Jun, 2020
Subject
Components, Circuits, Devices and Systems
Bonding
Three-dimensional displays
Transistors
Stacking
Resistance
Integrated circuit interconnections
Foundries
3DIC
SoIC
WLSI
ultra high bond density
sub-micron bond pitch
chiplets integration
system scaling
system deep partition
Language
ISSN
2377-5726
Abstract
An ultrahigh density 3D technology, SoIC_UHD, with sub-micron pitch inter-chip vertical interconnect enabling a density ≥ 1.2 million bonds/mm 2 is reported for the first time. Proven yield and reliability of SoIC_UHD are demonstrated with a foundry front-end wafer level 3D heterogeneous system integration (WLSI) platform. SoC deep partitioning into mini chiplets with SoIC_UHD can extend Moore's Law for longer term than that achieved by conventional 3DIC stacking with micro-bumps. Microsystem scaling, which is complementary to transistor scaling, can continue to improve transistor density, system PPA, and cost competitiveness.