학술논문

A novel approach to dual damascene patterning
Document Type
Conference
Source
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519) Interconnect technology conference Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International. :18-20 2002
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Simultaneous localization and mapping
Reflectivity
Dry etching
Coatings
Space technology
Dielectric substrates
Resists
Dielectric materials
Polymers
Absorption
Language
Abstract
In this paper, we present and discuss a novel approach to dual damascene patterning based on the invention of SLAM (Sacrificial Light Absorbing Material). We will focus on dual damascene patterning problems that led to the invention of SLAM, and present a side-by-side comparison of the patterning performance of SLAM-assisted dual damascene patterning and a Bottom Anti-Reflective Coating (BARC), the industry's primary approach. SLAM-assisted dual damascene patterning is an enabling technology for Intel's 130 nm technology and beyond.