학술논문

Versatile technology modeling for 22FDX platform development
Document Type
Conference
Source
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2017 International Conference on. :365-368 Sep, 2017
Subject
Components, Circuits, Devices and Systems
Transistors
MOS devices
Radio frequency
Performance evaluation
Resistance
Logic gates
Semiconductor process modeling
Language
ISSN
1946-1569
1946-1577
Abstract
The 22FDX platform offered by GLOBALFOUNDRIES consists of a family of differentiated products architected to enable applications across a variety of market segments such as RF & Analog, Ultra-low Power (ULP), and Ultra-low Leakage (ULL). In order to ensure the successful development of these new products, as well as to meet the time-to-market constraints, predictive Technology Computer Aided Design (TCAD) tools have been extensively used to guide development efforts, narrow the experimental conditions and reduce the number of learning cycles. The areas of impact expanded to not only predicting device outcome from process input, but also to topics traditionally not addressed by TCAD. In this paper, we present a comprehensive TCAD that has been deployed to optimize core oxide transistors, define approaches to attain ULL targets, and simultaneously investigate the AC behavior at lower operating voltages while improving RF performance. The all-encompassing co-optimization of process, device and layout has been achieved within the same platform.