학술논문
Low-Noise and Linear FET Amplifiers for Satellite Communications
Document Type
Periodical
Author
Source
IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 25(12):995-1000 Dec, 1977
Subject
Language
ISSN
0018-9480
1557-9670
1557-9670
Abstract
FET amplifiers with ambient noise figures as low as 4.8 dB at 12 GHz, 35-dB gain, and intercept points as high as +28 dBm have been developed for use in communications satellites. Predicted mean time to failure is in excess of 10/sup 6/ h.