학술논문
A Compact High-Isolation V-Band Millimeter Wave Wilkinson Power Divider Design in 65-nm CMOS Process
Document Type
Conference
Author
Source
2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Microwave and Millimeter Wave Technology (ICMMT), 2023 International Conference on. :1-3 May, 2023
Subject
Language
Abstract
Slim on-chip transmission lines of a quasi-rectangular coaxial structure are used to construct a 2-way Wilkinson power divider for millimeter-wave integrated circuits (ICs) in the V-band. With the ground-shielding metal layers surrounding the central core, a meandered design is adopted for the two quarter-wavelength transmission line segments and makes the power divider very compact. It also provides very high signal isolation from neighbouring devices and the resistive semiconductor substrate. In a 65-nm CMOS process, the power divider design occupies a chip area of only 285 × 67 μm 2 (≈ 0.019 mm 2 ). A low power loss and a very high isolation between the output ports are maintained in a frequency range from 50 to 75 GHz, achieving |S 21 | = -3.95 dB (with the 3 dB power division loss included), |S 23 | = -29 dB and |S 11 | = -29.5 dB, all at 60 GHz.