학술논문
Thermal stability of ruthenium MOS gate electrodes
Document Type
Conference
Author
Source
The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on. :167-170 2004
Subject
Language
Abstract
In this paper, thermal stability o/metal-organics vapour deposited (MOCVD) Ru gate electrodes grown on atomic-layer deposited (ALD) Hf0 2 dielectric films have been analysed. As-deposited MOS capacitors were annealed in forming gas (10% H 2 + 90% N 2 ) at temperature range 430 - 590 °C for 30 min. MOS capacitors were analysed by high-frequency capacitance-voltage (G-V), conductance-voltage (G-V) and current voltage (I-V) measurements resulting density of oxide charge, N eff , density of interface states, D ii and leakage current density, J leak respectively.