학술논문
大功率半导体激光器腔面氮钝化的研究 / Research on nitrogen passivation for high power semiconductor lasers
Document Type
Academic Journal
Author
何新; 崔碧峰; 刘梦涵; 李莎; 孔真真; 黄欣竹; HE Xin; CUI Bi-feng; LIU Meng-han; LI Sha; KONG Zhen-zhen; HUANG Xin-zhu
Source
激光与红外 / Laser & Infrared. 46(7):805-808
Subject
Language
Chinese
ISSN
1001-5078
Abstract
针对980 nm大功率半导体激光器腔面离子铣氮钝化处理工艺进行了研究，发现腔面离子铣氮钝化可以提高激光器的输出特性及COD功率，器件输出功率提高了32.14％；老化实验后，经过氮钝化的半导体激光器没有明显退化，而未经氮钝化处理的激光器退化严重；使用俄歇谱测试仪（AES）对钝化处理后的半导体激光器试验片进行测试，发现有部分的氮离子遗留在腔面处；氮元素含量由原有的0％上升到20％，与此同时，氧元素的含量由原来的61％降至30％。结果表明，该技术能够改善半导体激光器的腔面特性，器件的可靠性和使用寿命可望得到提高。
The ion bombardment and nitrogen passivation treatment process in the cavity were studied for 980 nm sem-iconductor lasers.This two treatment processes can improve the output characteristics and COD power of 980 nm semi-conductor lasers,and output power increases by 32.14%.Lasers with nitrogen passivation have no evident degradation after the aging experiment,but lasers with non-nitrogen passivation have severe degradation.The part of the nitrogen i-ons leaves the cavity surface after the lasers with nitrogen passivation are measured by the Auger spectroscopy analyzer (AES).The content of nitrogen increases from 0% to 20%,but the content of oxygen decreases from 61% to 30%. The results show that this process can improve the cavity surface features of semiconductor lasers,which makes the re-liability and the life of the device increase.
The ion bombardment and nitrogen passivation treatment process in the cavity were studied for 980 nm sem-iconductor lasers.This two treatment processes can improve the output characteristics and COD power of 980 nm semi-conductor lasers,and output power increases by 32.14%.Lasers with nitrogen passivation have no evident degradation after the aging experiment,but lasers with non-nitrogen passivation have severe degradation.The part of the nitrogen i-ons leaves the cavity surface after the lasers with nitrogen passivation are measured by the Auger spectroscopy analyzer (AES).The content of nitrogen increases from 0% to 20%,but the content of oxygen decreases from 61% to 30%. The results show that this process can improve the cavity surface features of semiconductor lasers,which makes the re-liability and the life of the device increase.