학술논문
Proton radiation damage tolerance of wide dynamic range SOI pixel detectors
Document Type
Working Paper
Author
Tsunomachi, Shun; Kohmura, Takayoshi; Hagino, Kouichi; Kitajima, Masatoshi; Doi, Toshiki; Aoki, Daiki; Ohira, Asuka; Shimizu, Yasuyuki; Fujisawa, Kaito; Yamazaki, Shizusa; Uchida, Yuusuke; Shimizu, Makoto; Itoh, Naoki; Arai, Yasuo; Miyoshi, Toshinobu; Nishimura, Ryutaro; Tsuru, Takeshi Go; Kurachi, Ikuo
Source
Subject
Language
Abstract
We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%.
Comment: 7 pages, 8 figures, published in proceedings for SPIE Astronomical Telescopes + Instrumentation in 2022
Comment: 7 pages, 8 figures, published in proceedings for SPIE Astronomical Telescopes + Instrumentation in 2022