학술논문

Extended Hubbard corrected tight-binding model for rhombohedral few-layer graphene
Document Type
Working Paper
Source
Subject
Condensed Matter - Mesoscale and Nanoscale Physics
Language
Abstract
Rhombohedral multilayer graphene (RnG) featuring partially flat bands has emerged as an important platform to probe strong Coulomb correlation effects. Theoretical consideration of local electron-electron interactions are of particular importance for electronic eigenstates with a tendency to spatially localize. We present a method to incorporate mean-field electron-electron interaction corrections in the tight-binding hopping parameters of the band Hamiltonian within the extended Hubbard model that incorporates ab initio estimates of on-site ($U$) and inter-site ($V$) Hubbard interactions for the $\pi$ bands of RnG. Our Coulomb-interaction renormalized band structures feature electron-hole asymmetry, band flatness, band gap, and anti-ferromagnetic ground states in excellent agreement with available experiments for $n \geq 4$. We reinterpret the putative gaps proposed in $n=3$ systems in terms of shifting electron and hole density of states peaks depending on the range of the Coulomb interaction models.
Comment: 8 pages, 5 figures