학술논문
Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
Document Type
Working Paper
Author
Anders, John; Benoit, Mathieu; Braccini, Saverio; Casanova, Raimon; Chen, Hucheng; Chen, Kai; di Bello, Francesco Armando; Fehr, Armin; Ferrere, Didier; Forshaw, Dean; Golling, Tobias; Gonzalez-Sevilla, Sergio; Iacobucci, Giuseppe; Kiehn, Moritz; Lanni, Francesco; Liu, Hongbin; Meng, Lingxin; Merlassino, Claudia; Miucci, Antonio; Nessi, Marzio; Perić, Ivan; Rimoldi, Marco; Sultan, D M S; Pinto, Mateus Vincente Barreto; Vilella, Eva; Weber, Michele; Wu, Weihao; Xu, Lailin; Zaffaroni, Ettore
Source
Subject
Language
Abstract
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
Comment: 14 pages, 11 figures
Comment: 14 pages, 11 figures