학술논문

The effect of ZrSi2and SiC doping on the microstructure and Jc-Bproperties of PIT processed MgB2tapes
Document Type
Article
Source
Superconductor Science and Technology; January 2006, Vol. 19 Issue: 1 p133-137, 5p
Subject
Language
ISSN
09532048; 13616668
Abstract
We investigated the effect of ZrSi2and SiC doping on the microstructure, critical current density Jcand flux pinning of Fe-sheathed MgB2tapes prepared by the in situpowder-in-tube method. Heat treatment was performed at a low temperature of 650?°C for 1 h. The phases, microstructures and flux pinning were characterized by means of x-ray diffraction, scanning electron microscope, magnetic and transport property measurements. It was found that the tapes doped with nanoscale SiC had the best pinning performance, while the ZrSi2powder showed a similar improved field dependence of Jccompared with undoped samples. Jcvalues for the SiC doped samples were enhanced by two orders of magnitude at 4.2 K in magnetic fields above 8 T. At 4.2 K and 10 T, the Jcreached ~1.5 × 104A cm?2. Moreover, the critical temperature for the doped tapes decreased slightly (<1.2 K). Microstructural analysis shows that very good grain connections or/and grain refinement were obtained for the doped tapes. The mechanism of the enhancement of the flux pinning is also discussed.