부산대학교 도서관

We report on the growth of thick (up to 1.2 \mbox{$\mu$m}) epitaxial samarium disilicide layers on (001) oriented silicon substrates. The films have the bulk tetragonal SmSi2structure and composition, and grow with a preferential orientation SmSi2[100] $\parallel$ Si[110]. A surface reconstruction transition from ($1{\times}1$) to ($2{\times}2$) appears below ${\sim}525$ \mbox{\circC}. Transport measurements show an n-type metallic conduction with a room temperature resistivity of 175 \mbox{$\mu$}$\Omega$ cm decreasing to 85 \mbox{$\mu$}$\Omega$ cm at 4 K, and a carrier concentration of $1.3 \times 10^{22}$ cm-3.