학술논문
Characterization of Strained Epitaxial Si1–xGexFilms Grown using Gas Source Molecular Beam Epitaxy
Document Type
Article
Author
Source
IETE Journal of Research; March 1997, Vol. 43 Issue: 2-3 p155-163, 9p
Subject
Language
ISSN
03772063; 0974780X
Abstract
State-of-the-art silicon-germanium heteroepitaxy techniques are reviewed. Strained Si1–xGexepitaxial films have been grown by Gas Source Molecular Beam Epitaxy (GSMBE) on p-Si. The films have been characterised using Rutherford Backscattering Spectroscopy (RBS), X-ray Photoelectron Spectroscopy (XPS), Spectroscopic Ellipsometry (SE), High Resolution X-ray Diffractometry (HXRD) for the crystalline quality of the epitaxial layer and Ge concentration. Atomic Force Microscopy (AFM) has been used for the determination of surface roughness for the study of the growth morphology.