학술논문
High‐performance full transparent tin‐doped zinc oxide thin‐film transistors fabricated on glass at low temperatures.
Document Type
Article
Author
Source
Subject
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ISSN
0013-5194
Abstract
High‐performance full transparent bottom‐gate type tin‐doped zinc oxide thin‐film transistors (TZO TFTs) had been successfully fabricated by RF magnetron sputtering on glass substrates at low temperatures. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated and an optimised growing condition (O2/Ar gas flow ratio: 8/92) for TZO film as the channel layer was acheived. Excellent device performance was obtained, with a low off‐state current (Ioff) of 10−12 A, a high on/off current ratio of 5 × 107, a high saturation mobility (μs) of 57 cm2/Vs, a steep subthreshold slope of 0.507 V/decade and a threshold voltage (Vth) of 3.5 V. These results highlight that excellent device performance can be realised in TZO film and TZO TFT is a promising candidate for transparent flat panel display. [ABSTRACT FROM AUTHOR]