부산대학교 도서관

AlGaN/GaN‐based high electron mobility transistors (HEMTs) are ideal candidates for power electronics in consumer, industrial, and space applications. Attributed to their excellent performance in electrical output and chemical stability, AlGaN/GaN HEMTs enable tolerant neutron irradiation in harsh environments. Different from high‐fluence irradiation‐induced device failure, the investigation of low‐fluence neutron irradiation is of great significance to understand the early damage mechanism of HEMTs. Here, the modulated electrical properties are presented of AlGaN/GaN HEMTs under low‐fluence neutron irradiations of 4.5 × 1013 and 6.0 × 1013 cm−2. After irradiation, the electrical characteristics of the samples are carefully measured, the output performance of different irradiated devices shows a similar change trend, i.e., almost no changes or only decreased slightly (≤14%) near the knee voltage. For leakage current, the samples irradiated with different fluences show different characteristics, including a slight decrease with the fluence of 4.5 × 1013 cm−2, and a slight increase with the fluence of 6.0 × 1013 cm−2. To further investigate the internal mechanisms, the performance changes are also simulated of the device by using Crosslight software. According to the measurements, it is concluded that the low‐fluence neutron irradiation will initially affect the 2DEG mobility and the surface states of the HEMTs. [ABSTRACT FROM AUTHOR]