학술논문
The effects of As overpressure and diffusion source on the diffusion of Mn in GaAs.
Document Type
Article
Author
Source
Subject
*ARSENIC
*MANGANESE
*GALLIUM arsenide
*DIFFUSION
*MOLECULAR beam epitaxy
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Language
ISSN
0021-8979
Abstract
Reports on the effects of arsenic overpressure and diffusion source on the diffusion of manganese in gallium arsenide. Impact of the reaction between the manganese film and the gallium arsenide matrix; Incorporation of the p-dopant in gallium arsenide by diffusion or during molecular beam epitaxy growth; Comparison of various Mn,Ga compounds.