학술논문
The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering.
Document Type
Article
Author
Source
Subject
*MOLECULAR beams
*CHEMICAL vapor deposition
*GALLIUM arsenide
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Language
ISSN
0021-8979
Abstract
Deals with a study which discussed the site distribution of silicon impurities in a range of molecular-beam epitaxy and metal-organo chemical vapor deposition gallium arsenide (GaAs) epilayers containing different concentrations of silicon. Experimental details; Localized vibrational mode absorption of bulk GaAs; Structure of the Si-X defect; Conclusion.