학술논문
Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111).
Document Type
Article
Author
Source
Subject
*SPECTROSCOPIC imaging
*ELLIPSOMETRY
*EPITAXIAL layers
*GRAPHENE
*SILICON carbide
*EXCITON theory
*LIGHT scattering
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Language
ISSN
0003-6951
Abstract
Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at ∼4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si- and C-polarity of the 3C-SiC(111) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene. [ABSTRACT FROM AUTHOR]