학술논문
Characterization of traps in GaAs/W Schottky diodes by optical and electrical deep-level transient spectroscopy methods.
Document Type
Article
Author
Source
Subject
*METALS
*SCHOTTKY barrier diodes
*DEEP level transient spectroscopy
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Language
ISSN
0021-8979
Abstract
Provides information on a study that investigated the deep traps in GaAs that originate from the impurities included in the Schottky metal on GaAs/W Schottky diodes using both the electrical and optical deep-level transient spectroscopy measurement methods. Experimental procedure; Results and discussion on the study; Conclusions.