부산대학교 도서관

A new parameter extraction technique has been outlined for high-κ gate dielectrics that directly yields values of the dielectric capacitance Cdi, the accumulation layer surface potential quotient, βacc, the flat-band voltage, the surface potential φs, the dielectric voltage, the channel doping density and the interface charge density at flat-band. The parallel capacitance, Cp (= Csc + Cit), was found to be an exponential function of φs in the strong accumulation regime, for seven different high-κ gate dielectrics. The slope of the experimental lnCp(φs) plot, i.e., ∣βacc∣, was found to depend strongly on the physical properties of the high-κ dielectric, i.e., was inversely proportional to [(Φbm*/m)½K/Cdi], where Φb is the band offset, and m* is the effective tunneling mass. Extraction of βacc represented an experimental carrier confinement index for the accumulation layer and an experimental gate-dielectric direct-tunneling current index. βacc may also be an effective tool for monitoring the effects of post-deposition annealing/processing. [ABSTRACT FROM AUTHOR]