학술논문
Modification of the properties of vanadium dioxide by plasma-immersion ion implantation.
Document Type
Article
Source
Subject
*VANADIUM dioxide
*PLASMA immersion ion implantation
*HYDROGENATION
*METALLIC thin films
*METAL-insulator transitions
*RADIATION doses
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Language
ISSN
1063-7850
Abstract
The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal-insulator phase transition observed in VO films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods. [ABSTRACT FROM AUTHOR]