학술논문
Doping Dependence of the Effects of In-Plane Disorder on T and the Pseudogap in Single Layer La214 and Double Layer Y123: a Comparative Study.
Document Type
Article
Source
Subject
*SEMICONDUCTOR doping
*SUPERCONDUCTING transitions
*TRANSITION temperature
*COMPARATIVE studies
*HIGH temperature superconductors
*
*
*
*
Language
ISSN
1557-1939
Abstract
High- T emerges from an strongly electronically correlated normal state in hole doped cuprates. In this paper, the comparative effect of Zn on the superconducting transition temperature, T, was studied for the LaSrCuZnO (Zn-La214) and YBa(CuZn)O (Zn-Y123) compounds as a function of hole concentration, p, and Zn content ( y) in order to explore the interplay among different electronic ground states in different cuprate systems. Zn induced rate of suppression of T, dT( p)/ dy, for Zn-La214 was found to be strongly p-dependent and showed a monotonic variation, except in the vicinity of p∼0.125 (i.e., near the 1/8th anomaly where the charge/spin stripe correlations are at their strongest). Magnitude of d T( p)/d y decreased markedly around p∼0.125. The same feature, at a somewhat reduced scale, was also observed for Zn-Y123. We have also reviewed the p-dependent pseudogap energy scale, ε( p), which shows a quasilinear decrease with increasing p, without any noticeable feature at p∼0.125. The magnitude and the evolution of ε( p) are quite similar for both Zn-La214 and Zn-Y123 compounds even though T and structural and electronic anisotropies are significantly different. [ABSTRACT FROM AUTHOR]