학술논문
Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−y Nx Biy alloys.
Document Type
Article
Author
Source
Subject
*ATOM-probe tomography
*ALLOYS
*CHARGE carrier mobility
*PHOTOCONDUCTIVITY
*TERAHERTZ materials
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Language
ISSN
0003-6951
Abstract
We have investigated the influence of non-stoichiometry and local atomic environments on carrier transport in GaAs(N)Bi alloy films using local-electrode atom probe tomography (LEAP) in conjunction with time-resolved terahertz photoconductivity measurements. The local concentrations of N, Bi, and excess As, as well as Bi pair correlations, are quantified using LEAP. Using time-resolved THz photoconductivity measurements, we show that carrier transport is primarily limited by excess As, with the highest carrier mobilities for layers with yBi > 0.035. [ABSTRACT FROM AUTHOR]