부산대학교 도서관

We present an extended X-ray absorption fine structure investigation of the local environment of Sn atoms in strained and relaxed Ge1-xSnx layers with different compositions. We show that the preferred configuration for the incorporation of Sn atoms in these Ge1-xSnx layers is that of a a-Sn defect, with each Sn atom covalently bonded to four Ge atoms in a classic tetrahedral configuration. Sn interstitials, Sn-split vacancy complexes, or Sn dimers, if present at all, are not expected to involve more than 2.5% of the total Sn atoms. This finding, along with a relative increase of Sn atoms in the second atomic shell around a central Sn atom in Ge1-xSnx layers with increasing Sn concentrations, suggests that the investigated materials are homogeneous random substitutional alloys. Within the accuracy of the measurements, the degree of strain relaxation of the Ge1-xSnx layers does not have a significant impact on the local atomic surrounding of the Sn atoms. Finally, the calculated topological rigidity parameter a**=0.69±0.29 indicates that the strain due to alloying in Ge1-xSnx is accommodated via bond stretching and bond bending, with a slight predominance of the latter, in agreement with ab initio calculations reported in literature. [ABSTRACT FROM AUTHOR]