학술논문
Temperature dependence of tunnel resistance for CoFeB/MgO/CoFeB magnetoresistive tunneling junctions: The role of magnon.
Document Type
Article
Author
Source
Subject
*QUANTUM tunneling
*MAGNETORESISTANCE
*IRON-cobalt alloys
*BORON
*MAGNESIUM oxide
*MAGNONS
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Language
ISSN
0021-8979
Abstract
Tunnel resistance for CoFeB/MgO/CoFeB junctions with a wide variety of resistance has been investigated as a function of bias voltage Vb and temperature to elucidate bias voltage dependence of the magnetoresistance ratio. Comparison with a conventional NiFe/AlOx/CoFe junction is also discussed. In the case of a parallel alignment of the magnetic moments with a MgO barrier, the Vb dependence was much smaller than that of the antiparallel (AP) alignment with a MgO barrier and of both alignment with an AlOx barrier. This probably originates from the unique tunnel mechanism with a MgO barrier: coherent tunneling of Δ1 electron states. In the case of AP alignment with a MgO barrier, distinctive features were observed: temperature coefficient of tunnel resistance steeply decreased with increasing absolute value of Vb at -0.2 V