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발행년	- (예 : 2010-2015)

Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)

Conference

Fujii, E.; Otsuki, T.; Judai, Y.; Shimada, Y.; Azuma, M.; Uemoto, Y.; Nagano, Y.; Nasu, T.; Izutsu, Y.; Matsuda, A.; Nakao, K.; Tanaka, K.; Hirano, K.; Ito, T.; Mikawa, T.; Kutsunai, T.; McMillan, L.D.; Paz de Araujo, C.A.

International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :597-600 1997

Full Text (IEEE) Find it@PNU

Embedded ferroelectric memory technology with completely encapsulated hydrogen barrier structure

Academic Journal

Nagano, Y.; Mikawa, T.; Kutsunai, T.; Natsume, S.; Tatsunari, T.; Ito, T.; Noma, A.; Nasu, T.; Hayashi, S.; Hirano, H.; Gohou, Y.; Judai, Y.; Fujii, E.

IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 18(1):49-54 Feb, 2005

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure

Academic Journal

Fajii, E.; Judai, Y.; Ito, T.; Kutsunai, T.; Nagano, Y.; Noma, A.; Nasu, T.; Izutsu, Y.; Mikawa, T.; Yasuoka, H.; Azuma, M.; Shimada, Y.; Sasai, Y.; Sato, K.; Otsuki, T.

IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 48(6):1231-1236 Jun, 2001

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

Conference

Nagano, Y.; Mikawa, T.; Kutsunai, T.; Hayashi, S.; Nasu, T.; Natsume, S.; Tatsunari, T.; Ito, T.; Goto, S.; Yano, H.; Noma, A.; Nagahashi, K.; Miki, T.; Sakagami, M.; Izutsu, Y.; Nakakuma, T.; Hirano, H.; Iwanari, S.; Murakuki, Y.; Yamaoka, K.; Goho, Y.; Judai, Y.; Fujii, E.; Sato, K.

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) VLSI technology VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on. :171-172 2003

Full Text (IEEE) Find it@PNU

A highly reliable ferroelectric memory technology with SrBi2Ta2O9-based material and metal covering cell structure

Academic Journal

Fujii, E.; Judai, Y.; Ito, T.; Kutsunai, T.; Nagano, Y.; Noma, A.; Nasu, T.; Izutsu, Y.; Mikawa, T.; Yasuoka, H.; Sasai, Y.; Sato, K.; Azuma, M.; Shimada, Y.; Otsuki, T.

In: IEEE Transactions on Electron Devices. (IEEE Transactions on Electron Devices, June 2001, 48(6):1231-1236)

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

0.18 μm SBT-based embedded FeRAM operating at a low voltage of 1.1 V.

Conference

Nagano, Y.; Mikawa, T.; Kutsunai, T.; Hayashi, S.; Nasu, T.; Natsume, S.; Tatsunari, T.; Ito, T.; Goto, S.; Yano, H.; Noma, A.; Nagahashi, K.; Miki, T.; Sakagami, M.; Izutsu, Y.; Nakakuma, T.; Hirano, H.; Iwanari, S.; Murakuki, Y.; Yamaoka, K.

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407); 2003, p171-172, 2p

Full Text (IEEE) Find it@PNU

0.18 μm SBT-Based Embedded FeRAM Operating at a Low Voltage of 1.1V

Conference

Nagano, Y.; Mikawa, T.; Kutsunai, T.; Hayashi, S.; Nasu, T.; Natsume, S.; Tatsunari, T.; Ito, T.; Goto, S.; Yano, H.; Noma, A.; Nagahashi, K.; Miki, T.; Sakagami, M.; Izutsu, Y.; Nakakuma, T.; Hirano, H.; Judai, Y.; Fujii, E.; Sato, K.; Iwanari, S.; Murakuki, Y.; Yamaoka, K.; Goho, Y.

In: Digest of Technical Papers - Symposium on VLSI Technology. (Digest of Technical Papers - Symposium on VLSI Technology, 2003, :171-172)

Full Text (IEEE) Scopus Find it@PNU

Effect of hypertonic dextrose solutions on intracranial pressure: In acute cranial injuries

Academic Journal

Jackson, H.; Kutsunai, T.; Leader, L.O.; Joseph, L.D.

In: Journal of the American Medical Association. (Journal of the American Medical Association, 11 March 1933, 100(10):731-733)

Scopus Find it@PNU

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