학술논문
Current Sharing Behavior of Parallel Connected Silicon Carbide MOSFETs Influenced by Parasitic Inductance
Document Type
Conference
Author
Source
2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia), 2019 10th International Conference on. :2846-2852 May, 2019
Subject
Language
ISSN
2150-6086
Abstract
The parasitic inductance from the wirings and the terminals of SiC MOSFETs has a significant impact on the behavior of current sharing of parallel-connected SiC MOSFETs. To investigate the mechanism of current mismatch in response to the parasitic inductance, the circuit model of parallel-connected SiC MOSFETs is built to obtain the mathematic relationship between current difference and parasitic inductance in both dynamic and static states. Because the way of connecting the parallel-connected SiC MOSFETs with the coupled inductor in series can lead to the turn-off voltage ringing and overshoot, an improved structure is further proposed in this paper. A RCD snubber circuit is added into the proposed structure by referring to the coupled inductor with transformer in fly-back converter. Finally, the approach is verified through the LTspice software and experiments.