학술논문

Solder metallization interdiffusion in microelectronic interconnects
Document Type
Conference
Source
1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299) Electronic components and technology Electronic Components and Technology Conference, 1999. 1999 Proceedings. 49th. :451-457 1999
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Metallization
Microelectronics
Gold
Soldering
Intermetallic
Annealing
Tin
Aging
Tensile stress
Electronics packaging
Language
ISSN
0569-5503
Abstract
We investigated Intermetallic compound formation mechanisms and their effect on the integrity of ball grid array Cu/Ni/Au/solder joints integrity were investigated. Substrates with three types of Au plating, and thus three different thicknesses [Electrolytic (2.6 and 0.75 /spl mu/m), Immersion (0.25 /spl mu/m), and Selective (0.02 /spl mu/m)] were used. After solder reflow, the solder joints were annealed for up to 1000 hrs at 150/spl deg/C. Optical and electronic metallography together with Energy Dispersive Spectroscopy were used to locate and identify phases present in the joint for different annealing times. Brittle failure of solder joints was ascribed to the formation of a ternary intermetallic (Au/sub 0.5/Ni/sub 0.5/)Sn/sub 4/ at the interface solder/substrate. In the absence of post-reflow thermal aging, only Ni/sub 3/Sn/sub 4/ was observed at the interface and it did not decrease the mechanical reliability of the joint. Tensile-shear stress tests were performed on unaged samples as well as samples aged for 1 hr, 4 hrs and 450 hrs.