학술논문
Radiation effects upon the mismatch of identically laid out transistor pairs
Document Type
Conference
Author
Source
2011 IEEE ICMTS International Conference on Microelectronic Test Structures Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on. :194-197 Apr, 2011
Subject
Language
ISSN
1071-9032
2158-1029
2158-1029
Abstract
This paper presents the DC behavior of transistors with finger layout and with gate enclosed layout in a 0.18μm CMOS technology under the influence of gamma-radiation. The threshold voltage shift and the drain current mismatch before and after irradiation has been investigated up to a total ionizing dose of 100kGy.