학술논문

Wafer Edge and Backside Profile Integration with 3-D Process Emulation
Document Type
Conference
Source
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2024 International Conference on. :1-4 Sep, 2024
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Semiconductor device modeling
Performance evaluation
Solid modeling
Emulation
Predictive models
Product development
Semiconductor process modeling
Surface treatment
Research and development
Next generation networking
3-D
Process
Wafer
Edge
Back-side
Bevel
Defect
Language
Abstract
Attention has been drawn on wafer front surface's patterning area while developing next-generation semiconductor products. Unfortunately, to enhance device performance, the number of process steps and integration schemes are diversified inducing complex patterns over whole surfaces including wafer edge and back-side (WEB) in final. Thus, focusing on those regions is required beyond the front, as defects and process risks are increased on the regions. So far, post-processes are executed to reduce defects after their occurrence at the edges and back-side, but it is important to understand defect generation mechanism to suppress them effectively. In this paper, we utilized 3-D process emulation on WEB profile integration to estimate defect risk in early stage of product development before defect occurs. In final, WEB profile has been integrated and consistent with real-wafer's cross-section microscopy images with typical defect sources.