학술논문

A Si-Interposer with Buried Cu Metal Stripes and Bonded to Si-Substrate Backside for Security IC Chips
Document Type
Conference
Source
2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2023 IEEE 73rd. :951-954 May, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Integrated circuits
Radiation effects
Program processors
Optical microscopy
Stimulated emission
Metals
Voltage
Hardware security
Secure packaging
Cryptography
Implementation attacks
Side channel leakage
Fault injection
CMOS
Language
ISSN
2377-5726
Abstract
IC secure packaging physically protects cryptographic processors against implementation attacks. A Si substrate of a CMOS IC chip in a 0.13 μm technology is thinned to 20 μm from its backside and bonded with a Si interposer buried with Cu stripes of 50 μm and 20 μm in depth and in width, respectively, to form “Backside Bonded Buried Metal (TBM).” The IC chips with TBM stripes form the internally hidden, physically unbreakable, electromagnetic and optical shielding structures. Although their presence is observable once an attacker uses an infrared microscope, the TBM stripes can obviate the inherent vulnerability of flip-chip assembly against Si backside attacks through spontaneous side-channel emission as well as intentional fault injection.