학술논문
Epitaxial growth of V2O3 thin films on Si(1 1 1) by molecular beam epitaxy
Document Type
Article
Author
Source
In Results in Physics June 2023 49
Subject
Language
ISSN
2211-3797
Abstract
Highlights •Impact of deposition parameters on VOx film composition and crystallinity.•Epitaxy of MBE-grown V2O3 thin film on unoxidized Si(111) substrate.•Epitaxial growth of V2O3 forming four equivalent domains in the PI phase.•Spontaneous oxidation of silicon after diffusion of O atoms from the V2O3 layer.