학술논문

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발행년	- (예 : 2010-2015)

Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN

Conference

Hogan, K.; Tozier, S.; Rocco, E.; Mahaboob, I.; Meyers, V.; McEwen, B.; Shahedipour-Sandvik, F.; Tompkins, R.; Derenge, M.; Jones, Kenneth; Shevelev, M.; Sklyar, V.; Lang, A.; Hart, J.; Taheri, M.; Reshchikov, M.

2019 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2019 IEEE International. :1-6 Mar, 2019

Full Text (IEEE) Find it@PNU

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Academic Journal

Rocco, E.; Mahaboob, I.; Hogan, K.; Tozier, S.; Meyers, V.; McEwen, B.; Novak, S.; Shahedipour-Sandvik, F.; Licata, O.; Mazumder, B.; Reshchikov, M.; Douglas Bell, L.

In: Scientific Reports. (Scientific Reports, 1 December 2020, 10(1))

Full Text (ProQuest Central) Open Access (EBSCO) Web of Science JCR 저널정보 Scopus Find it@PNU

Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE.

Academic Journal

Reshchikov, M.; Usikov, A.; Helava, H.; Makarov, Yu.; Puzyk, M.; Papchenko, B.

Journal of Electronic Materials; Apr2016, Vol. 45 Issue 4, p2178-2183, 6p, 6 Graphs

Full Text (ECC - 개별구독 전자저널) Full Text (ProQuest Central) Web of Science JCR 저널정보 Scopus Find it@PNU

Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates.

Conference

Wolan, J. T.; Gopalkrishna, A.; Saddow, S. E.; Mynbaeu, M.; Morkoç, H.; Reshchikov, M.; Yun, F.; Dmitriev, V.; Wood, C. E. C.

MRS Online Proceedings Library; 2000, Vol. 639 Issue 1, p1-6, 6p

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Preliminary characterization of GaN MBE epitaxial layers grown on nanoporous 6H-SiC substrates

Academic Journal

Wolan, J.T.; Gopalkrishna, A.; Saddow, S.E.; Mynbaeu, M.; Morkoç, H.; Reshchikov, M.; Yun, F.; Dmitriev, V.; Wood, C.E.C.

In: Materials Research Society Symposium - Proceedings. (Materials Research Society Symposium - Proceedings, 2001, 639:G11.41.1-G11.41.6)

Scopus Find it@PNU

Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy

Periodical

Iqbal, M.; Reshchikov, M.; He, L.; Morkoç, H.

Journal of Electronic Materials; May 2003, Vol. 32 Issue: 5 p346-349, 4p

Full Text (ECC - 개별구독 전자저널) Full Text (Springer-Archive) Full Text (ProQuest Central) Web of Science JCR 저널정보 Scopus Find it@PNU

Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

Periodical

Ramaiah, K.; Huang, D.; Reshchikov, M.; Yun, F.; Morkoç, H.; Jasinski, J.; Liliental-Weber, Z.; Sone, C.; Park, S.; Lee, K.

Journal of Materials Science: Materials in Electronics; April 2003, Vol. 14 Issue: 4 p233-245, 13p

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Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi-layered structures

Academic Journal

Usikov, A.; Shapovalova, L.; Kovalenkov, O.; Sukhoveev, V.; Volkova, A.; Ivantsov, V.; Dmitriev, V.; Meng, F.; Datta, R.; Mahajan, S.; Readinger, E.; Garrett, G.; Wraback, M.; Reshchikov, M.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Papers presented at the International Workshop on Nitride Semiconductors 2006, IWN 2006. (Physica Status Solidi (C) Current Topics in Solid State Physics, 2007, 4(7):2301-2305)

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