학술논문
Design of a charge sensitive preamplifier on high resistivity silicon
Document Type
Conference
Author
Source
IEEE Trans. Nucl. Sci.; (United States); 35:1; Conference: 34. nuclear science symposium and 19. nuclear power systems symposium, San Francisco, CA, USA, 21 Oct 1987
Subject
Language
English
Abstract
A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20rhoF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3..mu..m for silicon drift detectors.