부산대학교 도서관

Nano materials such as silicon nanowire, carbon nanotube and graphene have been expected to interesting alternative of conventional CMOS technology. In this thesis, we performed the fabrication and radio frequency (RF) characterization of nano device, not only RF FET but nanoelectromechanical (NEM) device.At first, we designed RF FET which is appropriate to RF measuring. In order to reduce RF power loss, we designed the device has coplanar waverguide (CPW) structure. Using this structure, we fabricated the RF CNTFET by placing CNT networks between the inter-digitized finger shaped source and drain electrodes. The S-parameters measured from the RF CNTFET were fitted with an hybrid -model equivalent circuit. From the ADS simulation, we extracted various parasitic parameters, and the extracted Cg (814 fF)was shown. Next, We fabricated self-transducing nanomechanical systems resonator based on silicon nanowire FET using a SOI wafer and a commercial CMOS technology by 8inch full-wafer integration and measured resonance frequency at 40 MHz~630 MHz. We proposed the equivalent circuit model of the devices. The model describes a nonlinear dynamics which include both mechanical and electrostatic nonlinearities. The results of the model shows very good agreement with experimentally measured values. This model shows the elastic hardening and capacitive softening in nonlinear dynamics.