부산대학교 도서관

To purchase or authenticate to the full-text of this article, please visit this link: http://dx.doi.org/10.1111/j.1551-2916.2005.00780.x Byline: ZG. Cambaz (1), GN. Yushin (1), Y. Gogotsi (1), KL. Vyshnyakova (2), LN. Pereselentseva (2) Abstract: Carbon was synthesized on [beta]-SiC whiskers by extraction of Si atoms from SiC. In this study, three different elevated temperature extraction methods were used to remove Si atoms from SiC: treatments in either Cl.sub.2 or HCl and vacuum decomposition. In all chlorination experiments and vacuum treatment at 1700[degrees]C, carbon preserved the original shape of SiC whiskers. At higher temperatures (2000[degrees]C), vacuum decomposition led to a distortion in the shape of the whiskers. High-resolution transmission electron microscopy and Raman spectroscopy showed that the structure of carbide-derived carbon depends on the Si extraction method and the process parameters. Chlorination of SiC resulted in the formation of mostly amorphous nanoporous carbon. High-temperature treatment of SiC in HCl environment produced fullerene-like structures, while high-temperature vacuum decomposition resulted in the formation of graphite. Transmission electron microscopy studies of the carbon coating thickness produced in Cl.sub.2 at various chlorination times revealed linear reaction kinetics at 700[degrees]C. Raman studies showed that the carbon structure became more ordered with increasing chlorination temperature. The results obtained demonstrate that by using the silicon extraction technique, one can precisely control the thickness and morphology of the carbon coating. Author Affiliation: (1)Drexel University, Department of Materials Science and Engineering, and A.J. Drexel Nanotechnology Institute, Philadelphia, Pennsylvania 19104 (2)Frantsevich Institute for Problems of Materials Science NAS of Ukraine, Kiev 03142, Ukraine Article History: Manuscript No. 20511. Received May 4, 2005; approved September 14, 2005. Article note: [dagger]Author to whom correspondence should be addressed. e-mail: gogotsi@drexel.edu