학술논문

A novel biasing technique for addressable parametric arrays
Document Type
Author abstract
Source
IEEE Transactions on Semiconductor Manufacturing. Feb, 2009, Vol. 22 Issue 1, p134, 12 p.
Subject
Simulation methods -- Analysis
Metal oxide semiconductor field effect transistors -- Analysis
Business
Computers
Electronics
Electronics and electrical industries
Language
English
ISSN
0894-6507
Abstract
Addressable arrays that use switches to isolate the devices being tested are limited in size and utility by the parasitic leakage caused by those switches. A new biasing technique that reduces the leakage of these switches has been studied to address this problem. Simulations performed in a 90 nm low-power technology predicted almost a two-decade drop in parasitic leakage of the array. Experimental data confirmed this improvement. 1 x 32 and 4 x 32 arrays using this biasing technique were used to investigate probe pad effects, device variability and geometry dependence. Index Terms--MOSFET array, parametric test, probe pads, source biasing, test structure design, variability.