학술논문

Growth of self-catalyzed GaAs nanowires using molecular-beam-epitaxy and structural characterization by in-situ X-ray diffraction
Document Type
Text
Source
Subject
III-V semiconductor
Molecular beam epitaxy
X-ray diffraction
In-situ
Physik
Galliumarsenid, Nanodraht, Molekularstrahlepitaxie, Röntgenbeugung
Time-resolved
Language
English