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Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(1 0 0) during high-temperature annealing

Document Type

Article

Author

Liu, J.P; Kong, M.Y ; Liu, X.F; Li, J.P; Huang, D.D; Li, L.X; Sun, D.Z

Source

In Journal of Crystal Growth 1999 201:556-559

Subject

Language

ISSN

0022-0248

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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