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Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Document Type

Article

Author

Almogbel, A.S.; Zollner, C.J.; Iza, M.; Wang, J.; Yao, Y.; Wang, M.; Foronda, H.; Nakamura, S.; DenBaars, S.P.; Speck, J.S.; Saifaddin, B.K.; Albadri, A.; Prozheev, I.; Tuomisto, F.

Source

In: AIP Advances. (AIP Advances, 1 September 2021, 11(9))

Subject

Language

English

ISSN

21583226

Online Access

Full Text (AIP) Open Access (EBSCO) Web of Science JCR 저널정보 Scopus Find it@PNU

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