학술논문
High performance SiC diodes based on an efficient planar termination
Document Type
Conference
Author
Source
2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) Semiconductor conference. CAS 2003 Semiconductor Conference, 2003. CAS 2003. International. 1:27-36 Vol. 1 2003
Subject
Language
Abstract
The paper addresses the state-of-art-in SiC power diodes. The best performance of Schottky barrier and junction barrier diodes on SiC is reviewed. The fundamental edge terminations used to relieve the crowding of the electric field of these devices are presented. An effective termination, based on the oxide ramp etching is described and the application of this method to SiC devices is discussed, achieving breakdown voltage of up to 95% from the ideally value.